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Crystal Materials |
Single Crystal Gallium Arsenide, VGF / LEC grown |
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Crystal Orientation |
(1 0 0) / (1 1 1) |
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Dopant |
Undoped / Zn |
Si / Te |
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Diameter |
50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm |
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Thickness |
325 ± 25um / 550 ± 25um / 625 ± 25um |
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Orientation |
(100) α 0 ±β 0 , off angle α and accuracy β upon request |
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Resistivity |
(1-30)x10 7 Ω.cm |
(1-10)x10 -3 Ω.cm |
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Mobility |
≥ 5000 cm 2 / V·sec |
N / A |
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Carrier Concentration |
N / A |
(0.1-3.0)×10 18 /cm3 |
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Etch Pit Density |
≤ 5·10 3cm-2/7·104cm-2 |
≤ 5·10 2 cm -2 |
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Orientation(OF) Flat, EJ / US |
(0-1-1)±0.5deg, 16 ±1.0mm /22±1.0mm/32.5±1.0mm |
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Identification(IF) Flat, EJ / US |
(0-1 1) )±5.0 deg, 8 ±1.0mm / 11±1.0mm/ 18±1.0mm |
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Front Side Surface |
Polished in Epi-ready Prime grade, |
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Backside Surface |
Polished / Lapping or Etched |
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Packaging |
N2 filled, cassette / fluoroware, 25pcs /single piece |
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